Patent · US Active

Ferroelectric memory cell for an integrated circuit

US10600808B2 · kind B2 · utility

77Cited by

3References

21Claims

0Family size

Assignee

NAMLAB GGMBH · DE

Inventor

Uwe Schroder · Dresden, DE

Key dates

Filing date	Sep 5, 2017
Grant date	Mar 24, 2020
Priority date	—
Expiry date	Sep 5, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/689
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An integrated circuit comprises a ferroelectric memory cell including an oxide storage layer, an electrode layer, and an interface layer. The oxide storage layer comprises a ferroelectric material that is at least partially in a ferroelectric state. The ferroelectric material comprises, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr). The interface layer is disposed between the oxide storage layer and the electrode layer and includes at least one element with a higher valence value than Hf or Zr.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.