Patent assignee · DE · COMPANY

NAMLAB GGMBH

22Patents
22Active
22Granted
54Portfolio score

Filing activity: Apr 21, 2008 → Jun 9, 2023 · 1 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US9830969B2 Multilevel ferroelectric memory cell for an integrated circuit Electricity 78 Active
US10600808B2 Ferroelectric memory cell for an integrated circuit Electricity 77 Active
US8304823B2 Integrated circuit including a ferroelectric memory cell and method of manufacturing the same Electricity 76 Active
US9818468B2 Charge storage ferroelectric memory hybrid and erase scheme Electricity 75 Active
US10043567B2 Multilevel ferroelectric memory cell for an integrated circuit Electricity 65 Active
US10872905B2 Integrated circuit including a ferroelectric memory cell and manufacturing method thereof Electricity 65 Active
US10963776B2 Artificial neuron based on ferroelectric circuit element Electricity 58 Active
US9053802B2 Ferroelectric memory cell for an integrated circuit Physics 23 Active
US9558804B2 Charge storage ferroelectric memory hybrid and erase scheme Electricity 21 Active
US10056393B2 Application of antiferroelectric like materials in non-volatile memory devices Physics 19 Active
US10424379B2 Polarization-based configurable logic gate Electricity 15 Active
US9865608B2 Method of forming a device including a floating gate electrode and a layer of ferroelectric material Electricity 9 Active
US9437420B2 Capacitors including amorphous dielectric layers and methods of forming the same Electricity 8 Active
US11205467B2 Ferroelectric memory and logic cell and operation method Physics 3 Active
US10347760B2 Reconfigurable nanowire field effect transistor, a nanowire array and an integrated circuit thereof Electricity 2 Active
US10978125B1 Transistor with adjustable rectifying transfer characteristic Electricity 1 Active
US8946617B2 Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltage Electricity 1 Active
US11424253B2 Device including a floating gate electrode and a layer of ferroelectric material and method for the formation thereof Electricity 1 Active
US11145665B2 Electrical storage device with negative capacitance Electricity 0 Active
US11699749B2 Heterostructure of an electronic circuit having a semiconductor device Electricity 0 Active
US11515428B2 Semiconductor device structure having multiple gate terminals Electricity 0 Active
US12094964B2 Heterostructure of an electronic circuit having a semiconductor device Electricity 0 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.