Imaging optical unit for a metrology system for examining a lithography mask
US10606048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2017 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Aug 16, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K7/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An imaging optical unit serves within a metrology system for examining a lithography mask. The lithography mask can be arranged in an object field of the imaging optical unit. The object field is defined by two mutually perpendicular object field coordinates. The imaging optical unit has an aperture stop of which the aspect ratio in the direction of the two object field coordinates differs from 1. This results in an imaging optical unit which can be used for the examination of lithography masks that are designed for projection exposure with an anamorphic projection optical unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.