Synchronized pulsing of plasma processing source and substrate bias
US10607813B2 · kind B2 · utility
56Cited by
86References
14Claims
0Family size
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Key dates
| Filing date | Nov 16, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Nov 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for plasma processing are disclosed. A method includes applying power to a plasma processing chamber during a first processing step and generating, during the first processing step, a first plasma sheath voltage between a substrate and a plasma. During a second processing step (that follows the first processing step), power is applied to the plasma processing chamber and a different plasma sheath voltage is applied between the substrate and the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.