Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same
US10608102B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Sep 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.