Inventor · Daejeon, KR

Jong-Won Lim

54Patents
5h-index
61Co-inventors
75Inventor score

Filing activity: Dec 26, 2001 → Feb 14, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7387955B2 Field effect transistor and method for manufacturing the same Electricity 9 Active
US7902572B2 Field effect transistor and method for manufacturing the same Electricity 7 Active
US7419862B2 Method of fabricating pseudomorphic high electron mobility transistor Electricity 7 Active
US7970126B2 Communication terminal with movable display Electricity 6 Active
US7183149B2 Method of manufacturing field effect transistor Electricity 5 Expired
US8841154B2 Method of manufacturing field effect type compound semiconductor device Electricity 5 Active
US8841969B2 Automatic gain control feedback amplifier Electricity 5 Active
US8722474B2 Semiconductor device including stepped gate electrode and fabrication method thereof Electricity 5 Active
US6796723B2 Submount for opto-electronic module and packaging method using the same Electricity 5 Expired
US7671697B2 High-isolation switching device for millimeter-wave band control circuit Electricity 4 Active
US8723222B2 Nitride electronic device and method for manufacturing the same Electricity 4 Active
US7889023B2 Switching circuit for millimeter waveband control circuit Electricity 4 Active
US7429894B2 Power device having connection structure compensating for reactance component of transmission line Electricity 3 Active
US9178474B2 Feedback amplifier Electricity 3 Active
US10256811B2 Cascode switch circuit including level shifter Electricity 2 Active
US8053345B2 Method for fabricating field effect transistor using a compound semiconductor Electricity 2 Active
US9012920B2 Wafer level packaged GaN power semiconductor device and the manufacturing method thereof Electricity 2 Active
US6541319B2 Method of manufacturing a self-aligned gate transistor with P-type impurities selectively implanted below the gate, source and drain electrodes Electricity 2 Expired
US8853821B2 Vertical capacitors and methods of forming the same Electricity 2 Active
US8901608B2 Transistor and method of fabricating the same Electricity 2 Active
US9780176B2 High reliability field effect power device and manufacturing method thereof Electricity 1 Active
US8518794B2 Semiconductor devices and methods of forming thereof Electricity 1 Active
US8941231B2 Electronic chip and method of fabricating the same Electricity 1 Active
US9899226B2 Semiconductor device and fabrication method thereof Electricity 1 Active
US9634112B2 Field effect transistor and method of fabricating the same Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.