Inductors formed with through glass vias
US10614942B2 · kind B2 · utility
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20Claims
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Assignee
Inventors
Key dates
| Filing date | Jul 13, 2018 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Aug 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2001/0085
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Aspects of the present disclosure provide three-dimensional (3D) through-glass-via (TGV) inductors for use in electronic devices. In some embodiments, a first portion of a 3D TGV inductor may be formed in a first wafer and a second portion of a 3D TGV may be formed in a second wafer. The first portion and second portion may be bonded together in a bonded wafer device thereby forming a larger inductor occupying relatively little wafer space on the first and the second wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.