Inventor · Taipei, TW

Wei-Chuan Chen

71Patents
14h-index
89Co-inventors
87Inventor score

Filing activity: Oct 9, 1998 → Oct 16, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
USD696668S1 Input device General 177 Active
US9548445B2 Amorphous alloy space for perpendicular MTJs Physics 79 Active
US9245608B2 Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device Electricity 78 Active
US6261267A Automatic IV shut off valve Human Necessities 45 Expired
US8362580B2 Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer Electricity 40 Active
US9343659B1 Embedded magnetoresistive random access memory (MRAM) integration with top contacts Electricity 39 Active
US10043967B2 Self-compensation of stray field of perpendicular magnetic elements Electricity 36 Active
US8704320B2 Strain induced reduction of switching current in spin-transfer torque switching devices Electricity 36 Active
US9935258B2 Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device Electricity 35 Active
US9142762B1 Magnetic tunnel junction and method for fabricating a magnetic tunnel junction Electricity 23 Active
US9704919B1 High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells Electricity 22 Active
US8981502B2 Fabricating a magnetic tunnel junction storage element Electricity 22 Active
US9269893B2 Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch Electricity 17 Active
US7583529B2 Magnetic tunnel junction devices and magnetic random access memory Emerging Cross-Sectional Technologies 16 Active
US7606063B2 Magnetic memory device Physics 13 Active
US8796046B2 Methods of integrated shielding into MTJ device for MRAM Electricity 13 Active
US10210920B1 Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications Electricity 13 Active
US10060880B2 Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing Physics 12 Active
US8557610B2 Methods of integrated shielding into MTJ device for MRAM Electricity 12 Active
US9614143B2 De-integrated trench formation for advanced MRAM integration Electricity 12 Active
US9461094B2 Switching film structure for magnetic random access memory (MRAM) cell Physics 11 Active
US9214624B2 Amorphous spacerlattice spacer for perpendicular MTJs Physics 10 Active
US8923044B2 MTP MTJ device Electricity 9 Active
US8564080B2 Magnetic storage element utilizing improved pinned layer stack Electricity 6 Active
US8026562B2 Magnetic memory element utilizing spin transfer switching Physics 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.