Tone reversal during EUV pattern transfer using surface active layer assisted selective deposition
US10615037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2018 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Aug 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a hard mask layer over a substrate and activating a surface of the hard mask layer to form a surface active layer over the hard mask layer. A resist layer is formed over the hard mask layer and a metal-containing layer is selectively formed over the surface active layer in at least one trench defined between portions of the resist layer. The resist layer is removed to define a pattern between portions of the selectively formed metal-containing layer and the hard mask layer is etched in accordance with the pattern. The etched pattern is transferred to at least a portion of the substrate and at least a portion of the hard mask layer, surface active layer, and metal-containing layer are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.