Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
US10615072B2 · kind B2 · utility
0Cited by
8References
15Claims
0Family size
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Key dates
| Filing date | Apr 30, 2018 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Apr 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure having isolated deep substrate vias with decreased pitch and increased aspect ratio is disclosed. The structure includes a device layer over a buried oxide layer, a deep trench extending through the device layer, a dielectric filler in the deep trench, via holes in the dielectric filler, and conductive fillers in the via holes being the isolated deep substrate vias. The dielectric filler may include silicon oxide. The conductive fillers may include tungsten or copper. An adjacent pair of the isolated deep substrate vias within the deep trench has a pitch equal to or less than 1.0 microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.