Inventor · Irvine, CA, US

Arjun Kar-Roy

22Patents
8h-index
14Co-inventors
68Inventor score

Filing activity: May 24, 2000 → Apr 30, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US6777777B1 High density composite MIM capacitor with flexible routing in semiconductor dies Electricity 34 Expired
US6430028B1 Method for fabrication of an MIM capacitor and related structure Electricity 23 Expired
US6680521B1 High density composite MIM capacitor with reduced voltage dependence in semiconductor dies Electricity 21 Expired
US7589009B1 Method for fabricating a top conductive layer in a semiconductor die and related structure Electricity 14 Active
US7041569B1 Method for fabricating a high density composite MIM capacitor with reduced voltage dependence in semiconductor dies Electricity 12 Expired
US6411492B1 Structure and method for fabrication of an improved capacitor Electricity 12 Expired
US7078310B1 Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor dies Electricity 12 Expired
US7897484B2 Fabricating a top conductive layer in a semiconductor die Electricity 9 Active
US7772673B1 Deep trench isolation and method for forming same Electricity 6 Active
US8212331B1 Method for fabricating a backside through-wafer via in a processed wafer and related structure Electricity 5 Active
US8598713B2 Deep silicon via for grounding of circuits and devices, emitter ballasting and isolation Electricity 4 Active
US8098351B2 Self-planarized passivation dielectric for liquid crystal on silicon structure and related method Physics 4 Active
US7704874B1 Method for fabricating a frontside through-wafer via in a processed wafer and related structure Electricity 4 Active
US9887123B2 Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method Electricity 3 Active
US7052966B2 Deep N wells in triple well structures and method for fabricating same Electricity 3 Expired
US9136157B1 Deep N wells in triple well structures Electricity 2 Expired
US9346669B2 Robust MEMS structure with via cap and related method Electricity 2 Active
US9458011B2 Scalable self-supported MEMS structure and related method Electricity 0 Active
US9377350B2 Light sensor with chemically resistant and robust reflector stack Physics 0 Active
US10615071B2 Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method Electricity 0 Active
US9105681B2 Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolation Electricity 0 Active
US10615072B2 Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.