Method of bias temperature instability calculation and prediction for MOSFET and FinFET
US10621386B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2017 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Apr 11, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method, a system and a non-transitory machine-readable storage medium are provided. In one or more aspects, a computer-implemented method for bias temperature instability (BTI) calculation of a device includes simulating the device, using an electronic design automation tool. The simulation includes determining a first degradation value after applying a first sequence of stress values to the device for a first plurality of time steps. The simulation further includes determining a first degradation recovery value after the first plurality of time steps. The simulation further includes determining a first recovered degradation value after the first plurality of time steps by combining the first degradation value and the first degradation recovery value. The first degradation value, the first degradation recovery value, and the first recovered degradation value are associated with one or more model parameters of the device. The simulation is a transient analysis simulation, and the device is a FINFET or MOSFET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.