Sense amplifier, sensing method and non-volatile memory using the same
US10622035B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Dec 28, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier includes a first sample and hold circuit, a second sample and hold circuit, a latch-type amplifier. The first sample and hold circuit is coupled to a bit line and configured to sample and hold memory cell data during a pre-charge phase of a sensing operation. The second sample and hold circuit is coupled to a reference bit line and configured to sample and hold data of a reference memory cell data during the pre-charge phase of the sensing operation. The latch-type amplifier, coupled to the first sample and hold circuit and the second sample and hold circuit, and configured to compare the memory cell data and the reference cell data during an evaluation phase of the sensing operation to output a sensing signal. The sense amplifier is isolated from the bit line and the reference bit line during the evaluation phase of the sensing operation. A sensing method adapted to a sense amplifier and a non-volatile memory include a sense amplifier are also introduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.