Inventor · Baoshan, TW

Hung-Chang Yu

61Patents
9h-index
19Co-inventors
75Inventor score

Filing activity: Dec 31, 1998 → Jan 2, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9165629B2 Method and apparatus for MRAM sense reference trimming Physics 52 Active
US8687412B2 Reference cell configuration for sensing resistance states of MRAM bit cells Physics 31 Active
US6366071B1 Low voltage supply bandgap reference circuit using PTAT and PTVBE current source Physics 24 Expired
US8493776B1 MRAM with current-based self-referenced read operations Physics 16 Active
US8902641B2 Adjusting reference resistances in determining MRAM resistance states Physics 15 Active
US6127853A High speed current-mode sense-amplifier Physics 14 Expired
US8509003B2 Read architecture for MRAM Physics 14 Active
US8923040B2 Accommodating balance of bit line and source line resistances in magnetoresistive random access memory Physics 11 Active
US8817553B2 Charge pump control scheme using frequency modulation for memory word line Physics 9 Active
US7710182B2 Reliable level shifter of ultra-high voltage device used in low power application Electricity 9 Active
US8964458B2 Differential MRAM structure with relatively reversed magnetic tunnel junction elements enabling writing using same polarity current Physics 8 Active
US9406367B2 Method and apparatus for MRAM sense reference trimming Physics 7 Active
US9110829B2 MRAM smart bit write algorithm with error correction parity bits Physics 6 Active
US9875774B1 Memory device and method of operating same Physics 3 Active
US6717208B2 Disabling flash memory to protect memory contents Electricity 3 Expired
US10147469B2 Memory device and method of operating same Physics 2 Active
US10998024B2 Method for enhancing tunnel magnetoresistance in memory device Physics 2 Active
US10497407B2 Memory device and method of operating same Physics 2 Active
US8654589B2 Charge pump control scheme for memory word line Physics 2 Active
US7062738B1 Flash memory compiler with flexible configurations Physics 2 Expired
US9747159B2 MRAM smart bit write algorithm with error correction parity bits Physics 2 Active
US8570792B2 Magnetoresistive random access memory Electricity 2 Active
US8369180B2 Memory word line boost using thin dielectric capacitor Physics 2 Active
US9299677B2 Package with multiple plane I/O structure Electricity 1 Active
US8842489B2 Fast-switching word line driver Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.