Magnetic thin film deposition chamber and thin film deposition apparatus
US10622145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2019 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Apr 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3452
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.