Peijun Ding
103Patents
28h-index
108Co-inventors
93Inventor score
Filing activity: May 5, 1994 → May 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6328871A | Barrier layer for electroplating processes | Electricity | 110 | Expired |
| US6066892A | Copper alloy seed layer for copper metallization in an integrated circuit | Electricity | 107 | Expired |
| US6350353B2 | Alternate steps of IMP and sputtering process to improve sidewall coverage | Electricity | 100 | Expired |
| US5879523A | Ceramic coated metallic insulator particularly useful in a plasma sputter reactor | Emerging Cross-Sectional Technologies | 89 | Expired |
| US6037257A | Sputter deposition and annealing of copper alloy metallization | Electricity | 84 | Expired |
| US6398929B1 | Plasma reactor and shields generating self-ionized plasma for sputtering | Electricity | 69 | Expired |
| US6919275B2 | Method of preventing diffusion of copper through a tantalum-comprising barrier layer | Electricity | 59 | Expired |
| US6436267B1 | Method for achieving copper fill of high aspect ratio interconnect features | Electricity | 52 | Expired |
| US5911113A | Silicon-doped titanium wetting layer for aluminum plug | Electricity | 52 | Expired |
| US5736021A | Electrically floating shield in a plasma reactor | Electricity | 50 | Expired |
| US6139699A | Sputtering methods for depositing stress tunable tantalum and tantalum nitride films | Electricity | 48 | Expired |
| US5766379A | Passivated copper conductive layers for microelectronic applications and methods of manufacturing same | Electricity | 44 | Expired |
| US6387805B2 | Copper alloy seed layer for copper metallization | Electricity | 44 | Expired |
| US6235163A | Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance | Electricity | 43 | Expired |
| US6207558A | Barrier applications for aluminum planarization | Electricity | 43 | Expired |
| US6582569B1 | Process for sputtering copper in a self ionized plasma | Electricity | 41 | Expired |
| US6413383B1 | Method for igniting a plasma in a sputter reactor | Electricity | 40 | Expired |
| US6692617B1 | Sustained self-sputtering reactor having an increased density plasma | Electricity | 38 | Expired |
| US6160315A | Copper alloy via structure | Electricity | 38 | Expired |
| US6399479B1 | Processes to improve electroplating fill | Electricity | 38 | Expired |
| US6627050B2 | Method and apparatus for depositing a tantalum-containing layer on a substrate | Electricity | 38 | Expired |
| US6758947B2 | Damage-free sculptured coating deposition | Electricity | 35 | Expired |
| US6893541B2 | Multi-step process for depositing copper seed layer in a via | Electricity | 35 | Expired |
| US7253109B2 | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system | Electricity | 35 | Expired |
| US6911124B2 | Method of depositing a TaN seed layer | Electricity | 32 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.