Plasma etching apparatus
US10622193B2 · kind B2 · utility
1Cited by
10References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2015 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Nov 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching apparatus is for etching a substrate and includes at least one chamber, a substrate support positioned within the at least one chamber, and a plasma production device for producing a plasma for use in etching the substrate. The plasma production device comprises an electrically conductive coil which is positioned within the at least one chamber, and the coil is formed from a metallic material which can be sputtered onto an interior surface of the at least one chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.