Semiconductor structures and methods of forming the same
US10622321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | May 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures and methods of forming the same are disclosed. The semiconductor structure includes a first die, a second die, a first encapsulating material and a protection layer. The first die includes a first substrate. The second die is bonded to the first die and includes a second substrate. The first encapsulating material encapsulates the first die. The protection layer is disposed on a sidewall of the first substrate and between the first substrate and the first encapsulating material, wherein a material of the protection layer is different from materials of the second substrate and the first encapsulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.