High-voltage GaN high electron mobility transistors with reduced leakage current
US10622467B2 · kind B2 · utility
5Cited by
40References
26Claims
0Family size
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Key dates
| Filing date | Nov 26, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Nov 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, a thin insulating layer formed beneath the gate, a gate-connected field plate, and a source-connected field plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.