Inventor · Willowdale, MA, US

Timothy E. Boles

46Patents
8h-index
33Co-inventors
75Inventor score

Filing activity: Oct 31, 1996 → Feb 5, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6150197A Method of fabricating heterolithic microwave integrated circuits Emerging Cross-Sectional Technologies 26 Expired
US6114716A Heterolithic microwave integrated circuits Electricity 25 Expired
US6014064A Heterolithic voltage controlled oscillator Electricity 20 Expired
US7026223B2 Hermetic electric component package Emerging Cross-Sectional Technologies 19 Expired
US6559024B1 Method of fabricating a variable capacity diode having a hyperabrupt junction profile Electricity 15 Expired
US5976941A Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates Electricity 15 Expired
US6040225A Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices Electricity 12 Expired
US6130471A Ballasting of high power silicon-germanium heterojunction biploar transistors Electricity 9 Expired
US8174050B2 Structure of a pHEMT transistor capable of nanosecond switching Electricity 8 Active
US5716859A Method of fabricating a silicon BJT Emerging Cross-Sectional Technologies 6 Expired
US10622467B2 High-voltage GaN high electron mobility transistors with reduced leakage current Electricity 5 Active
US6946717B2 High voltage semiconductor device Emerging Cross-Sectional Technologies 5 Expired
US11127737B2 Monolithic multi-I region diode limiters Electricity 4 Active
US10541323B2 High-voltage GaN high electron mobility transistors Electricity 4 Active
US7049181B2 Method of making heterojunction P-I-N diode Emerging Cross-Sectional Technologies 3 Expired
US6794734B2 Heterojunction P-I-N diode and method of making the same Emerging Cross-Sectional Technologies 3 Expired
US11056483B2 Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor Electricity 3 Active
US10950598B2 Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor Electricity 3 Active
US11038023B2 III-nitride material semiconductor structures on conductive silicon substrates Electricity 2 Active
US11574906B2 Monolithic multi-I region diode switches Electricity 2 Active
US11705448B2 Monolithic multi-I region diode limiters Electricity 2 Active
US11158575B2 Parasitic capacitance reduction in GaN-on-silicon devices Electricity 2 Active
US10651317B2 High-voltage lateral GaN-on-silicon Schottky diode Electricity 2 Active
US11233047B2 Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon Electricity 1 Active
US11270928B2 Unibody lateral via Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.