Patent · US Active

RF device integrated on an engineered substrate

US10622468B2 · kind B2 · utility

3Cited by

2References

16Claims

0Family size

Assignee

Qromis, Inc. · US

Inventors

Vladimir Odnoblyudov · Danville, US
Cem Basceri · Boise, US
Ozgur Aktas · Santa Clara, US

Key dates

Filing date	Feb 7, 2018
Grant date	Apr 14, 2020
Priority date	—
Expiry date	Feb 7, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A substrate for RF devices includes a polycrystalline ceramic core and an interlayer structure. The interlayer structure includes a first silicon oxide layer coupled to the polycrystalline ceramic core, a polysilicon layer coupled to the first silicon oxide layer, a second silicon oxide layer coupled to the polysilicon layer, a barrier layer coupled to the second silicon oxide layer, a third silicon oxide layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the third silicon oxide layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.