Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon
US10626298B1 · kind B1 · utility
1Cited by
5References
10Claims
0Family size
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Key dates
| Filing date | Mar 20, 2019 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Mar 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical mechanical polishing compositions contain polyethoxylated amines, phosphoric acid or salts thereof, and positively charged nitrogen containing colloidal silica abrasive particles. The chemical mechanical polishing compositions are used in polishing methods for suppressing the removal rate of amorphous silicon while maintaining tunable oxide to silicon nitride removal rate ratios. The chemical mechanical polishing compositions can be used in front-end-of line semiconductor processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.