Image sensor including doped regions and manufacturing method therefor

US10629646B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing (Shanghai) International Corporation · CN
• Semiconductor Manufacturing (Beijing) International Corporation · CN

Inventors

• Tzu-Yin Chiu · Marlboro, US
• Chong Wang · Shanghai, CN
• Haifang Zhang · 安丰镇, CN
• Xuanjie Liu · Shanghai, CN

Key dates

• Filing date: Nov 22, 2017
• Grant date: Apr 21, 2020
• Expiry date: Nov 22, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/811

Abstract

The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The method includes: providing a semiconductor structure, where the semiconductor structure includes: a semiconductor substrate, and a first active region located on the semiconductor substrate, the first active region including a first doped region and a second doped region abutting against the first doped region, and the second doped region being located at an upper surface of the first active region; forming a semiconductor layer on an upper surface of the second doped region; and forming a contact connected to the semiconductor layer. The present disclosure enables defects or damages caused when forming the contact to be kept away from a junction field formed by the second doped region and the first doped region. Therefore, leakage current may be reduced and device performances may be improved.