Insulated gate bipolar transistor
US10629714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Oct 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An IGBT is provided with at least two first cells, each of which have an n doped source layer, a p doped base layer, an n doped enhancement layer. The base layer separates the source layer from the enhancement layer, an n-doped drift layer and a p doped collector layer. Two trench gate electrodes are arranged on the lateral sides of the first cell. The transistor includes at least one second cell between the trench gate electrodes of two neighboring first cells, which has on the emitter side a p+ doped well and a further n doped enhancement layer which separates the well from the neighboring trench gate electrodes. An insulator layer stack is arranged on top of the second cell on the emitter side to insulate the second cell and the neighboring trench gate electrodes from the metal emitter electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.