Manufacturing method and structure of oxide thin film transistor
US10629745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2014 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Feb 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
The present invention provides a manufacture method and a structure of an oxide thin film transistor. The manufacture method of the structure of the oxide thin film transistor comprises providing a carrier; forming an oxide semiconducting layer (4); forming an etching stopper layer (5); forming two vias (51, 53) in the etching stopper layer (5) to expose the oxide semiconducting layer (4); removing a skin layer of the oxide semiconducting layer (4) in the two vias (51, 53) to form two recesses (41, 43) respectively connecting the two vias (51, 53); forming a source (61) and a drain (63) on the etching stopper layer (5), and the source (61) fills one via (51) and the recess (41) connecting therewith, and the drain (63) fills the other via (53) and the recess (43) connecting therewith; performing a post process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.