Patent · US Active

Magnetoresistance device and method for forming the same

US10629802B1 · kind B1 · utility

2Cited by
5References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 31, 2018
Grant dateApr 21, 2020
Priority date
Expiry dateOct 31, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5615
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistance device is disclosed, comprising a bottom electrode, a magnetic tunneling junction (MTJ) disposed on the bottom electrode, a top electrode disposed on the magnetic tunneling junction, a first spacer disposed on the magnetic tunneling junction and covering a sidewall of the top electrode, and a second spacer disposed on the first spacer and conformally covering along a sidewall of the first spacer, a sidewall of the magnetic tunneling junction and a sidewall of the bottom electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.