Method for testing semiconductor die pad untouched by probe and related test circuit
US10634713B2 · kind B2 · utility
1Cited by
3References
14Claims
0Family size
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Key dates
| Filing date | Feb 22, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Dec 31, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/3008
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for testing a semiconductor die is provided. The method includes the following steps: charging a die pad of the semiconductor die to a precharge level; stopping charging the die pad to detect a period of time required for a voltage level of the die pad to change from the precharge level to a reference level, and accordingly generating a detection result; and determining a leakage current of the die pad according to the detection result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.