Correction using stack difference
US10635004B2 · kind B2 · utility
2Cited by
2References
27Claims
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Key dates
| Filing date | Nov 9, 2017 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Jun 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method including obtaining a fit of data for overlay of a metrology target for a patterning process as a function of a stack difference parameter of the metrology target; and using, by a hardware computer, a slope of the fit (i) to differentiate a metrology target measurement recipe from another metrology target measurement recipe, or (ii) calculate a corrected value of overlay, or (iii) to indicate that an overlay measurement value obtained using the metrology target should be used, or not be used, to configure or modify an aspect of the patterning process, or (iv) any combination selected from (i)-(iii).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.