Magnetoresistive random access memory
US10636841B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Oct 24, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Oct 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A semiconductor device includes: a first metal-oxide semiconductor (MOS) transistor and a second MOS transistor on a substrate; a magnetic tunneling junction (MTJ) between the first MOS transistor and the second MOS transistor; a first interlayer dielectric (ILD) layer on one side of the MTJ and above the first MOS transistor; and a second ILD layer on another side of the MTJ and above the second MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.