Method for fabricating MEMS device integrated with a semiconductor integrated circuit
US10640372B2 · kind B2 · utility
0Cited by
3References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 25, 2019 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jul 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R2201/003
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.