Method for forming film and method for forming aluminum nitride film
US10640862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2016 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Apr 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/291
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for forming a film and a method for forming an aluminum nitride film, in which two steps of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate, and the aluminum nitride film may serve as a buffer layer between a substrate and a gallium nitride layer in an electronic device, so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.