Reflective mask blank, reflective mask and method of manufacturing semiconductor device
US10642149B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2019 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jul 5, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2204/08
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm−1 is not more than 17 nm4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.