Method of etching substrate
US10643858B2 · kind B2 · utility
1Cited by
29References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2018 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Oct 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming patterns of a semiconductor device includes forming a photoresist pattern, which contains a first carbon compound, on a substrate, reforming a top surface of the photoresist pattern to form an upper mask layer which contains a second carbon compound, different from the first carbon compound, on the photoresist pattern, and etching a portion of the substrate using the upper mask layer and the photoresist pattern as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.