Sidewall insulated resistive memory devices
US10644066B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 14, 2018 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jun 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide enhanced data storage devices and systems, various systems, architectures, apparatuses, and methods, are provided herein. In a first example, a resistive memory device is provided. The resistive memory device includes an active region having resistance properties that can be modified to store one or more data bits in the resistive memory device, and at least one sidewall portion of the active region comprising a dopant configured to suppress conductance paths in the active region proximate to the at least one sidewall portion. The resistive memory device includes terminals configured to couple the active region to associated electrical contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.