SGT superjunction MOSFET structure
US10644102B2 · kind B2 · utility
2Cited by
33References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2017 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Jan 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a combination of shielded trench gate structure and a superjunction structure within an epitaxial layer including alternating n-doped and p-doped columns in an a drift region. In one example the gate trenches are formed in and over n-doped columns that have an extra charge region near and adjacent to the lower portion of the corresponding gate trench. The extra charge is balanced due to the shield electrodes in the gate trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.