Inventor · Sunnyvale, CA, US

Madhur Bobde

172Patents
17h-index
63Co-inventors
85Inventor score

Filing activity: Sep 30, 2006 → Oct 5, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7781826B2 Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter Electricity 47 Active
US7880223B2 Latch-up free vertical TVS diode array structure using trench isolation Electricity 33 Active
US8575695B2 Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode Electricity 31 Active
US8753935B1 High frequency switching MOSFETs with low output capacitance using a depletable P-shield Electricity 29 Active
US7554839B2 Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch Emerging Cross-Sectional Technologies 29 Active
US8338854B2 TVS with low capacitance and forward voltage drop with depleted SCR as steering diode Electricity 27 Active
US8338915B2 Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter Electricity 25 Active
US8698196B2 Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage Electricity 24 Active
US8809948B1 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 24 Active
US8951867B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 21 Active
US9190512B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 20 Active
US7795987B2 Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS Electricity 20 Active
US8946816B2 High frequency switching MOSFETs with low output capacitance using a depletable P-shield Electricity 19 Active
US8476698B2 Corner layout for superjunction device Electricity 19 Active
US8575685B2 Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path Electricity 19 Active
US7863995B2 Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS Electricity 18 Active
US9136380B2 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 18 Active
US8507978B2 Split-gate structure in trench-based silicon carbide power device Electricity 17 Active
US8441046B2 Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances Electricity 15 Active
US8785278B2 Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Electricity 15 Active
US8933506B2 Diode structures with controlled injection efficiency for fast switching Electricity 14 Active
US8785279B2 High voltage field balance metal oxide field effect transistor (FBM) Electricity 14 Active
US8710585B1 High voltage fast recovery trench diode Electricity 13 Active
US9252264B2 High frequency switching MOSFETs with low output capacitance using a depletable P-shield Electricity 13 Active
US8373208B2 Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode Electricity 13 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.