Light emitting element including contact electrode with laminate structure, and method of manufacturing the same
US10644204B2 · kind B2 · utility
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Key dates
| Filing date | Sep 14, 2017 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Sep 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1≤x≤1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.
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