Patent · US Active

Multichip device with temperature isolating bump bonds

US10644218B1 · kind B1 · utility

1Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 13, 2019
Grant dateMay 5, 2020
Priority date
Expiry dateMar 13, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N69/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A superconducting structure is provided that comprises a first superconducting device coupled to a second superconducting device employing a plurality of superconducting bump bond structures. Each of the plurality of superconducting bump bond structures comprise a first normal metal layer disposed on the top surface of a given one of a plurality of first contact pads, a second normal metal layer disposed on the top surface of a given one of a plurality of second contact pads, and a superconducting metal layer disposed between the first normal metal layer and the second normal metal layer. The metal thicknesses of each of the first normal metal layer, the second normal metal layer, and the specific material of the superconducting metal and normal metal are selected to inhibit the transfer of heat between the first superconducting device and the second superconducting device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.