Method for carrying out phosphide in-situ injection synthesis by carrier gas
US10648100B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2017 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Dec 11, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/007
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished. In the present invention in the synthesis process, the shielding inert gas is introduced through the carrier gas intake conduit to enable the phosphorus gas to be stably injected into t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.