Reflective optical element for EUV lithography

US10649340B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Dirk Heinrich Ehm · Beckingen, DE
• Vitaliy Shklover · Heidenheim, DE
• Irene Ament · Aalen, DE
• Stefan Schmidt · Aalen, DE
• Moritz Becker · Stuttgart, DE
• Stefan Wiesner · Lauchheim, DE
• Diana Urich · Munich, DE
• Robert Meier · Dallas, US
• Ralf Winter · Tegernsee, DE
• Christof Jalics · Aalen, DE
• Holger Kierey · Aalen, DE
• Eric Eva · Aalen, DE

Key dates

• Filing date: Jan 25, 2019
• Grant date: May 12, 2020
• Expiry date: Jan 25, 2039

Classification

• Technology area (CPC G): Physics
• CPC primary: G21K2201/067
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer (60) is arranged between the reflective coating (54) and the substrate (51). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.