Ternary memory cell and ternary memory cell arrangement

US10650892B2 · kind B2 · utility

Assignee

• Ferroelectric Memory GmbH · DE

Inventor

• Marko Noack · Dresden, DE

Key dates

• Filing date: Apr 23, 2018
• Grant date: May 12, 2020
• Expiry date: May 15, 2038

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/223
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

In various embodiments, a ternary memory cell is provided, the ternary memory cell including: a first ferroelectric memory cell and a second ferroelectric memory cell in a parallel or serial arrangement, wherein each of the first ferroelectric memory cell and the second ferroelectric memory cell is switchable into a first ferroelectric memory cell state and a second ferroelectric memory cell state; and wherein a first matching state is defined by the first ferroelectric memory cell in the first ferroelectric memory cell state and the second ferroelectric memory cell in the second ferroelectric memory cell state, wherein a second matching state is defined by the first ferroelectric memory cell in the second ferroelectric memory cell state and the second ferroelectric memory cell in the first ferroelectric memory cell state, and wherein a third matching state is defined by the first ferroelectric memory cell and the second ferroelectric memory cell being in the same ferroelectric memory cell state.