Patent · US Active

Semiconductor device with metal structure electrically connected to a conductive structure

US10651140B2 · kind B2 · utility

0Cited by

12References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Schneegans · Vaterstetten, DE
Franziska Haering · Regensburg, DE
Hans-Joachim Schulze · Taufkirchen, DE
Bernhard Weidgans · Bernhardswald, DE

Key dates

Filing date	Aug 10, 2018
Grant date	May 12, 2020
Priority date	—
Expiry date	Sep 15, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3512
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor device includes forming a semiconductor substrate that has a conductive structure, and forming a precursor auxiliary layer stack on a first section of the conductive structure. The precursor auxiliary layer stack has a precursor adhesion layer and a precursor barrier layer between the precursor adhesion layer and the conductive structure. The precursor adhesion layer contains a second metal. The method further includes forming, on the precursor auxiliary layer stack, a metal structure containing a first metal and forming, from portions of the precursor auxiliary layer stack an adhesive layer containing the first and second metals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.