Three-dimensional memory devices and methods for forming the same

US10651187B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventor

• Jun Liu · 红钢城街道, CN

Key dates

• Filing date: Oct 1, 2018
• Grant date: May 12, 2020
• Expiry date: Oct 1, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50

Abstract

Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a substrate, a peripheral device disposed on the substrate, a peripheral interconnect layer disposed above the peripheral device, a first source plate disposed above and electrically connected to the peripheral interconnect layer, a first memory stack disposed on the first source plate, a first memory string extending vertically through the first memory stack and in contact with the first source plate, and a first bit line disposed above and electrically connected to the first memory string and the peripheral device.