Patent assignee · CN · COMPANY

YANGTZE MEMORY TECHNOLOGIES CO., LTD.

1,087Patents
1,083Active
1,087Granted
69Portfolio score

Filing activity: Mar 23, 2018 → Jun 18, 2024

Most-cited patents

PatentTitleAreaCited byStatus
US10147732B1 Source structure of three-dimensional memory device and method for forming the same Electricity 43 Active
US10600781B1 Multi-stack three-dimensional memory devices Electricity 25 Active
US10553604B2 Through array contact structure of three-dimensional memory device Electricity 21 Active
US10510415B1 Memory device using comb-like routing structure for reduced metal line loading Electricity 21 Active
US10593690B2 Hybrid bonding contact structure of three-dimensional memory device Electricity 20 Active
US10636813B1 Three-dimensional memory devices having transferred interconnect layer and methods for forming the same Electricity 17 Active
US10600763B1 Multi-deck three-dimensional memory devices and methods for forming the same Electricity 17 Active
US10930661B2 Embedded pad structures of three-dimensional memory devices and fabrication methods thereof Electricity 12 Active
US10811071B1 Three-dimensional memory device with static random-access memory Electricity 11 Active
US11024371B2 Method of programming memory device and related memory device Electricity 11 Active
US11133325B2 Memory cell structure of a three-dimensional memory device Electricity 11 Active
US11158622B1 Three-dimensional memory devices Electricity 10 Active
US10930663B2 Interconnect structure of three-dimensional memory device Electricity 10 Active
US11562985B2 Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same Electricity 9 Active
US10559592B1 Memory device and forming method thereof Electricity 8 Active
US10804283B2 Openings layout of three-dimensional memory device Electricity 8 Active
US10580788B2 Methods for forming three-dimensional memory devices Electricity 8 Active
US10423178B1 LDO regulator using NMOS transistor Physics 8 Active
US10950623B2 3D NAND memory device and method of forming the same Electricity 8 Active
US10964718B2 Three-dimensional memory devices and fabrication methods thereof Electricity 7 Active
US11189326B1 Non-destructive mode cache programming in NAND flash memory devices Emerging Cross-Sectional Technologies 7 Active
US11031377B2 Integration of three-dimensional NAND memory devices with multiple functional chips Electricity 7 Active
US11232839B1 Erasing method for 3D NAND flash memory Electricity 7 Active
US11081496B2 Three-dimensional memory devices and fabrication methods thereof Electricity 6 Active
US10651187B2 Three-dimensional memory devices and methods for forming the same Electricity 6 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.