Word line structure of three-dimensional memory device

US10651192B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Qiang Xu · Hangzhou City, CN
• Fandong Liu · 红钢城街道, CN
• Zongliang Huo · 红钢城街道, CN
• Zhiliang Xia · 红钢城街道, CN
• Yaohua Yang · Beaverton, US
• Peizhen Hong · Hubei, CN
• Wenyu Hua · Hubei, CN
• Jia He · Yangshuo, CN

Key dates

• Filing date: Jul 26, 2018
• Grant date: May 12, 2020
• Expiry date: Jul 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53257
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate, a first tier of conductor layers of a first length comprising a first plurality of conductor layers extending along a first direction over the substrate. The first direction is substantially parallel to a top surface of the substrate. In some embodiments, the memory device also includes at least one connection portion conductively connecting two or more conductor layers of the first tier, and a first metal contact via conductively shared by connected conductor layers of the first tier and connected to a first metal interconnect.