Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same
US10651196B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2018 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Nov 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical repetition of a unit layer stack including an insulating layer, a sacrificial material layer, and a nucleation promoter layer is formed over a substrate. Memory stack structures are formed through the vertical repetition. Each of the memory stack structures comprises a memory film and a vertical semiconductor channel. Backside recesses are formed by removing the sacrificial material layers selective to the insulating layers and the nucleation promoter layers within the vertical repetition. Electrically conductive layers are formed in the backside recesses by selectively growing a metallic material from physically exposed surfaces of the nucleation promoter layers while suppressing growth of the metallic material from physically exposed surfaces of the insulating layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.