Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer
US10651298B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2018 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Oct 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4738
Abstract
The disclosure provides an HBT structure with bandgap graded hole barrier layer, comprising: a sub-collector layer, a collector layer, a hole barrier layer, a base layer, an emitter layer, an emitter cap layer, and an ohmic contact layer, all stacked sequentially on a substrate; with the hole barrier layer formed of at least one of AlGaAs, AlGaAsN, AlGaAsP, AlGaAsSb, and InAlGaAs, Aluminum composition being less than 22%, and In, N, P, and Sb compositions being respectively less than or equal to 10%; wherein bandgaps of the hole barrier layer at least comprise a gradually increasing bandgap from the base layer towards the collector layer and the largest bandgap of the hole barrier layer is greater than bandgaps of the base layer and the collector layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.