VISUAL PHOTONICS EXPITAXY CO., LTD
26Patents
20Active
26Granted
46Portfolio score
Filing activity: May 20, 1998 → Feb 10, 2024 · 3 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6287882A | Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same | Electricity | 80 | Expired |
| US6258699A | Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same | Emerging Cross-Sectional Technologies | 75 | Expired |
| US7335924B2 | High-brightness light emitting diode having reflective layer | Electricity | 19 | Expired |
| US7384808B2 | Fabrication method of high-brightness light emitting diode having reflective layer | Electricity | 17 | Active |
| US6064076A | Light-emitting diode having a transparent substrate | Electricity | 10 | Expired |
| US6100544A | Light-emitting diode having a layer of AlGaInP graded composition | Electricity | 7 | Expired |
| US7385236B2 | BiFET semiconductor device having vertically integrated FET and HBT | Electricity | 2 | Active |
| US10651298B2 | Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer | Electricity | 2 | Active |
| US8994069B2 | BiHEMT device having a stacked separating layer | Electricity | 1 | Active |
| US7573080B1 | Transient suppression semiconductor device | Electricity | 1 | Active |
| US11158995B2 | Laser diode with defect blocking layer | Electricity | 0 | Active |
| US12424822B2 | Semiconductor laser diode including multiple active layers and a grating layer | Electricity | 0 | Active |
| US11862938B2 | Semiconductor laser diode | Electricity | 0 | Active |
| US11133405B2 | High ruggedness heterojunction bipolar transistor | Electricity | 0 | Active |
| US11049936B2 | High ruggedness heterojunction bipolar transistor structure | Electricity | 0 | Active |
| US7224005B2 | Heterojunction bipolar transistor structure | Electricity | 0 | Expired |
| US9130027B2 | High electron mobility bipolar transistor | Electricity | 0 | Active |
| US11482830B2 | Measurement method of reflection spectrum of vertical cavity surface emitting laser diode (VCSEL) and epitaxial wafer test fixture | Physics | 0 | Active |
| US11929427B2 | High ruggedness heterojunction bipolar transistor (HBT) | Electricity | 0 | Active |
| US12424824B2 | Vertical-cavity surface-emitting semiconductor laser diode with the mode filter | Electricity | 0 | Active |
| US10818781B2 | Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer | Electricity | 0 | Active |
| US11721954B2 | Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain | Electricity | 0 | Active |
| US12295152B2 | High ruggedness heterojunction bipolar transistor (HBT) | Electricity | 0 | Active |
| US11799011B2 | Semiconductor epitaxial wafer | Electricity | 0 | Active |
| US9853136B2 | Directed epitaxial heterojunction bipolar transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.