Patent · US Active

Reducing or eliminating nanopipe defects in III-nitride structures

US10651340B2 · kind B2 · utility

0Cited by

13References

12Claims

0Family size

Assignee

LUMILEDS LLC · US

Inventors

Patrick N. Grillot · San Jose, US
Isaac Wildeson · San Jose, US
Tigran Nshanian · San Jose, US
Parijat Deb · San Jose, US

Key dates

Filing date	Nov 14, 2018
Grant date	May 12, 2020
Priority date	—
Expiry date	Nov 14, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/73265
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.