Scalable spin-orbit torque (SOT) magnetic memory
US10658021B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 17, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Dec 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic storage device includes a plurality of first wires extending along a first direction and a plurality of second wires extending along a second direction different from the first direction. The plurality of second wires form a grid with the plurality of first wires. The magnetic storage device further includes a plurality of spin orbit torque magnetic random access memory (SOT-MRAM) devices. Each of the plurality of SOT-MRAM devices is disposed at a respective position on the grid. The magnetic storage device further includes write circuitry, including a transistor coupled to each respective first wire of the plurality of first wires, to apply a first write current along the respective first wire in the first direction, and readout circuitry to read a data value stored by a respective SOT-MRAM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.